Photoresist composition, method of manufacturing a polarizer and method of manufacturing a display substrate using the same

ABSTRACT

A photoresist composition includes about 65% by weight to about 80% by weight of a mono-functional monomer, about 5% by weight to about 20% by weight of a di-functional monomer, about 1% by weight to about 10% by weight of a multi-functional monomer including three or more functional groups, about 1% by weight to about 5% by weight of a photoinitiator, and less than about 1% by weight of a surfactant, each based on a total weight of the photoresist composition.

This application claims priority to Korean Patent Application No.10-2012-0039496, filed on Apr. 17, 2012, and all the benefits accruingtherefrom under 35 U.S.C. §119, the contents of which are hereinincorporated by reference in its entirety.

BACKGROUND

1. Field

Exemplary embodiments relate to a photoresist composition, a method ofmanufacturing a polarizer and a method of manufacturing a displaysubstrate using the photoresist composition. More particularly,exemplary embodiments relate to a photoresist composition that may beused in a nanoimprinting process for manufacturing a polarizer, a methodof manufacturing a polarizer and a method of a display substrate usingthe photoresist composition.

2. Description of the Related Art

Generally, a liquid crystal display device is thinner and lighter than acathode ray tube (“CRT”) display device, such that the liquid crystaldisplay is widely used. However, the liquid crystal display device usesa liquid crystal layer within a liquid crystal display panel as aphoto-shutter in cooperation with linearly polarized light irradiatedinto the liquid crystal display panel to display an image. The liquidcrystal display device also includes a backlight assembly which provideslight to the liquid crystal display panel.

The liquid crystal display panel includes a polarizer for changing arandomly polarized light, which is irradiated from the backlightassembly, to a linearly polarized light. The polarizer absorbs lightirradiated from the backlight assembly, so that the polarizerundesirably has a low level of efficiency and heat-resistance, and iseasily deteriorated by an ultraviolet light.

As an alternative polarizer technology which may be substituted for aconventional polarizer, a technology using a wire grid pattern is beingdeveloped. A width and a pitch between wire grids of the wire gridpattern may be tens of nanometers to hundreds of nanometers in size,which is shorter than a visible light wavelength so that light polarizedby the wire grid pattern may have a polarization degree substantiallysimilar to light polarized by the conventional polarizer.

For manufacturing the wire grid polarizer, a nanoimprinting method maybe used. According to the nanoimprinting method, a mold patterned tohave a wire grid shape is prepared, the wire grid shape of the mold istranscribed onto a photoresist layer which is on a metal layer to form aphotoresist pattern, and the photoresist pattern is used as a mask toetch the underlying metal layer.

However, a photoresist pattern formed by a conventional photoresistcomposition which is used in the nanoimprinting method is easilyseparated from a metal layer during a dry-etching process using a plasmagas, so that the efficiency and the reliability of the polarizer formedby the nanoimprinting method are reduced. Thus there remains a need foran improved photoresist composition.

SUMMARY

One or more exemplary embodiment provides a photoresist compositionforming an improved photoresist pattern.

One or more exemplary embodiments also provides a method ofmanufacturing a polarizer using the photoresist composition.

One or more exemplary embodiments also provides a method ofmanufacturing a display substrate using the photoresist composition.

According to an exemplary embodiment, a photoresist composition isprovided. The photoresist composition includes about 65 percent (%) byweight to about 80% by weight of a mono-functional monomer; about 5% byweight to about 20% by weight of a di-functional monomer; about 1% byweight to about 10% by weight of a multi-functional monomer includingthree or more functional groups; about 1% by weight to about 5% byweight of a photoinitiator; and less than about 1% by weight of asurfactant, each based on a total weight of the photoresist composition.

In an exemplary embodiment, the mono-functional monomer may include atleast one selected from glycidyl acrylate, glycidyl methacrylate,hydroxyethyl methacrylate, 2-hydroxy-3-phenoxy-propyl acrylate,diethylene methylether methacrylate, hydroxyethyl acrylate, butylmethacrylate, hydroxypropyl acrylate, 2-phenoxyethyl acrylate,2-phenoxyethyl methacrylate, 3,3,5-trimethylcyclohexyl methacrylate,isobornyl acrylate, isobornyl methacrylate, isodecyl acrylate, isodecylmethacrylate, isooctyl acrylate, lauryl acrylate, stearyl acrylate,tetrahydrofurfuryl acrylate and tridecyl acrylate.

In an exemplary embodiment, the di-functional monomer may include atleast one selected from 1,6-hexanediol diacrylate, 1,6-hexanedioldimethacrylate, ethyleneglycol dimethacrylate, diethylenedimethacrylate, 1,1,2-dodecanediol dimethacrylate, 1,4-butanedioldimethacrylate, neopentylglycol diacrylate, diethylene diacrylate,dipropyleneglycol diacrylate, bisphenol A diacrylate, bisphenol Adimethacrylate, ethyleneglycol diacrylate, tetraethyleneglycoldiacrylate, tricyclodecanedimethanol diacrylate and triethyleneglycoldiacrylate.

In an exemplary embodiment, the multi-functional monomer may include atleast one selected from pentaerythritol triacrylate, pentaerythritoltetraacrylate, trimethylpropane triacrylate, trimethylpropanetrimethaacrylate, grycerol triacrylate, tri(2-hydroxyethyl)isocyanuratetriacrylate, di-trimethylpropane tetraacrylate, dipentaerythritolpentaacrylate and pentaerythritol tetraacrylate.

In an exemplary embodiment, the photoinitiator may include at least oneselected from2-benzyl-2-(dimethylamino)-1-[4-(morpholinyl)phenyl]-1-butanone, phenylbis(2,4,6-trimethyl)benzoyl and 1-hydroxycyclohexyl phenylketone.

According to another exemplary embodiment, a method of forming apolarizer includes providing a reflective layer on a base substrate;coating a photoresist composition on the reflective layer to form aphotoresist coating layer, the photoresist composition including: about65% by weight to about 80% by weight of a mono-functional monomer, about5% by weight to about 20% by weight of a di-functional monomer, about 1%by weight to about 10% by weight of a multi-functional monomer includingthree or more functional groups, about 1% by weight to about 5% byweight of a photoinitiator, and less than about 1% by weight of asurfactant, each based on a total weight of the photoresist composition;contacting the photoresist coating layer with a stamp having a wire gridshape to pattern the photoresist coating layer; curing the patternedphotoresist layer to form a photoresist pattern having the wire gridshape; removing the stamp from photoresist pattern having the wire gridshape; and etching the reflective layer using the photoresist pattern asa mask, to form a wire grid pattern to form the polarizer.

In an exemplary embodiment, the reflective layer may include a metallayer, and a protective layer on the metal layer.

In an exemplary embodiment, the metal layer may include at least oneselected from nickel, aluminum, titanium, silver and chrome.

In an exemplary embodiment, the protective layer may include at leastone selected from a silicon nitride and a silicon oxide.

In an exemplary embodiment, the curing the photoresist coating layerincludes irradiating an ultraviolet light onto the photoresist coatinglayer.

In an exemplary embodiment, the photoresist pattern may include a firstportion having a first thickness, and a second portion having a secondthickness less than the first thickness. Before etching the reflectivelayer, the second portion of the photoresist pattern may be removed toexpose a portion of the reflective layer.

In an exemplary embodiment, the removing the second portion of thephotoresist pattern may include applying a plasma to an entirety of thephotoresist pattern.

According to another exemplary embodiment, another method ofmanufacturing a display substrate includes: providing a reflective layeron a base substrate, coating a photoresist composition on the reflectivelayer to form a photoresist coating layer, the photoresist compositionincluding about 65% by weight to about 80% by weight of amono-functional monomer, about 5% by weight to about 20% by weight of adi-functional monomer, about 1% by weight to about 10% by weight of amulti-functional monomer including three or more functional groups,about 1% by weight to about 5% by weight of a photoinitiator, and lessthan about 1% by weight of a surfactant, each based on a total weight ofthe photoresist composition; contacting the photoresist coating layerwith a stamp having a wire grid shape to pattern the photoresist coatinglayer; curing the patterned photoresist coating layer to form aphotoresist pattern having the wire grid shape; removing the stamp fromthe photoresist pattern having the wire grid shape; etching thereflective layer using the photoresist pattern as a mask to form a wiregrid pattern; providing a planarizing protecting film on the wire gridpattern; and providing a switching element array on the planarizingprotecting film to manufacture the display substrate.

According to another exemplary embodiment, a method of manufacturing adisplay substrate includes: providing a reflective layer on a firstsurface of a base substrate, coating a photoresist composition on thereflective layer to form a photoresist coating layer, the photoresistcomposition including about 65% by weight to about 80% by weight of amono-functional monomer, about 5% by weight to about 20% by weight of adi-functional monomer, about 1% by weight to about 10% by weight of amulti-functional monomer including three or more functional groups,about 1% by weight to about 5% by weight of a photoinitiator, and lessthan about 1% by weight of a surfactant, each based on a total weight ofthe photoresist composition; contacting the photoresist coating layerwith a stamp having a wire grid shape to pattern the photoresist coatinglayer; curing the patterned photoresist coating layer to form aphotoresist pattern having the wire grid shape; removing the stamp fromthe photoresist pattern having the wire grid shape; etching thereflective layer using the photoresist pattern as a mask to form a wiregrid pattern; providing a planarizing protecting film on the wire gridpattern; and providing a switching element array on a second surfaceopposing to the first substrate of the base substrate to manufacture thedisplay substrate.

According to one or more exemplary embodiment of the photoresistcomposition, the method of manufacturing of a polarizer and the methodof manufacturing a display substrate, a photoresist pattern which has ahigh level of resistance to a dry-etching process using a plasma gas,may be formed. Thus, the reliability of an imprinting or nanoimprintingprocess for manufacturing a polarizer is improved. Furthermore, aviscosity of the photoresist composition is controlled by using amono-functional monomer, and the photoresist composition may exclude anextra solvent used in a conventional photoresist composition. Thus, apre-baking process for drying the solvent is omitted, so that themanufacturing efficiency may be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages will become more apparent bydescribing in detailed exemplary embodiments thereof with reference tothe accompanying drawings, in which:

FIG. 1 to FIG. 6 are cross-sectional views illustrating an exemplaryembodiment of a method of manufacturing a polarizer;

FIG. 7 to FIG. 13 are cross-sectional views illustrating an exemplaryembodiment of a method of manufacturing a display substrate;

FIG. 14 is a cross-sectional view illustrating an exemplary embodimentof a display panel having a manufactured polarizer; and

FIG. 15 is a cross-sectional view illustrating another exemplaryembodiment of a display panel having a manufactured polarizer.

DETAILED DESCRIPTION

It will be understood that when an element or layer is referred to asbeing “on” or “connected to” another element or layer, the element orlayer can be directly on or connected to another element or layer orintervening elements or layers. In contrast, when an element is referredto as being “directly on” or “directly connected to” another element orlayer, there are no intervening elements or layers present. As usedherein, connected may refer to elements being physically and/orelectrically connected to each other. Like numbers refer to likeelements throughout. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third,etc., may be used herein to describe various elements, components,regions, layers and/or sections, these elements, components, regions,layers and/or sections should not be limited by these terms. These termsare only used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the invention.

Spatially relative terms, such as “lower,” “under,” “above,” “upper” andthe like, may be used herein for ease of description to describe therelationship of one element or feature to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation, in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “lower” or “under”relative to other elements or features would then be oriented “above”relative to the other elements or features. Thus, the exemplary term“under” can encompass both an orientation of above and below. The devicemay be otherwise oriented (rotated 90 degrees or at other orientations)and the spatially relative descriptors used herein interpretedaccordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes” and/or “including,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Embodiments of the invention are described herein with reference tocross-section illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of the invention. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, embodiments of the invention should not be construed aslimited to the particular shapes of regions illustrated herein but areto include deviations in shapes that result, for example, frommanufacturing.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

All methods described herein can be performed in a suitable order unlessotherwise indicated herein or otherwise clearly contradicted by context.The use of any and all examples, or exemplary language (e.g., “suchas”), is intended merely to better illustrate the invention and does notpose a limitation on the scope of the invention unless otherwiseclaimed. No language in the specification should be construed asindicating any non-claimed element as essential to the practice of theinvention as used herein.

Hereinafter, the invention will be described in detail with reference tothe accompanying drawings.

Hereinafter, an exemplary embodiment of a photoresist compositionaccording to will be explained. Thereafter, exemplary embodiments of amethod of manufacturing a polarizer and a method of manufacturing adisplay substrate will be explained in detail with reference to theaccompanying drawings.

An exemplary embodiment of a photoresist composition includes about 65percent (%) by weight to about 80% by weight of a mono-functionalmonomer, about 5% by weight to about 20% by weight of a di-functionalmonomer, about 1% by weight to about 10% by weight of a multi-functionalmonomer including three or more functional groups, about 1% by weight toabout 5% by weight of a photoinitiator, and less than about 1% by weightof a surfactant, each based on a total weight of the photoresistcomposition.

The mono-functional monomer has a single reactive functional group. Whenlight is irradiated onto the photoresist composition, themono-functional monomer is activated by the photoinitiator, and themono-functional monomer forms a chain polymer by combining with at leastone of the mono-functional monomer, the di-functional monomer or themulti-functional monomer. The mono-functional monomer has a lowerviscosity than the di-functional monomer and the multi-functionalmonomer, and the mono-functional monomer may serve as a solvent toprovide a photoresist composition having a suitable viscosity.Furthermore, the mono-functional monomer may have a faster activationrate than the di-functional monomer and the multi-functional monomer.Thus, the mono-functional monomer may increase a photo-curing speed ofthe photoresist composition.

In an exemplary embodiment, the mono-functional monomer includes a(meth)acrylate group. The mono-functional monomer may include an epoxygroup as well as a (meth)acrylate group.

Examples of the mono-functional monomer may include glycidyl acrylate,glycidyl methacrylate, hydroxyethyl methacrylate,2-hydroxy-3-phenoxy-propyl acrylate, diethylene glycol methylethermethacrylate, hydroxy ethylacrylate, butyl methacrylate, hydroxypropylacrylate, 2-phenoxyethyl acrylate, 2-phenoxyethyl methacrylate,3,3,5-trimethylcyclohexyl methacrylate, isobornyl acrylate, isobornylmethacrylate, isodecyl acrylate, isodecyl methacrylate, isooctylacrylate, lauryl acrylate, stearyl acrylate, tetrahydrofurfurylacrylate, tridecyl acrylate and the like. These can be used each aloneor in a combination thereof.

When an amount of the mono-functional monomer is less than about 65% byweight, based on the total weight of the photoresist composition, theviscosity of a composition is increased, and a pattern having a suitableresolution may not be easily imprinted. When the amount of themono-functional group is greater than about 80% by weight, cross-linkingfrom photo-curing may not be sufficient, and the stability of aphotoresist pattern may be reduced. In an embodiment, the amount of themono-functional monomer is between about 65% by weight and about 80% byweight, based on the total weight of the photoresist composition.

The di-functional monomer has two reactive functional groups. Thedi-functional monomer may have a lower viscosity than themulti-functional monomer, and the di-functional monomer may prevent anincrease of the viscosity of the composition. The di-functional monomerforms a chain polymer by combining with the di-functional monomer, themono-functional monomer or the multi-functional monomer, or thedi-functional group may be cross-linked with an adjacent polymer chain.

In an exemplary embodiment, the di-functional monomer includes a(meth)acrylate group. Examples of the di-functional monomer may include1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, ethyleneglycol dimethacrylate, diethylene glycol dimethacrylate,1,1,2-dodecanediol dimethacrylate, 1,4-butanediol dimethacrylate,neopentyl glycol diacrylate, diethylene glycol diacrylate, diproyleneglycol diacrylate, bisphenol A diacrylate, bisphenol A dimethacrylate,ethylene glycol diacrylate, tetraethylene glycol diacrylate,tricyclodecane dimethanol diacrylate, triethylene glycol diacrylate andthe like. These can be used each alone or in a combination thereof. Inan embodiment, the di-functional monomer may include an epoxy group aswell as a (meth)acrylate group.

When an amount of the di-functional monomer is less than about 5% byweight, based on the total weight of the photoresist composition,cross-linking by photo-curing may not be sufficient, so that thestability of the photoresist pattern may be reduced. When an amount ofthe di-functional monomer is greater than about 20% by weight, theviscosity of a composition may be increased, pattern having suitableresolution may not be easily imprinted. The amount of the di-functionalmonomer may be between about 5% by weight and about 20% by weight, basedon the total weight of the photoresist composition. In one exemplaryembodiment, the amount of the di-functional monomer may be between 8% byweight and about 10% by weight, based on the total weight of thephotoresist composition.

The multi-functional monomer includes three or more reactive functionalgroups. The multi-functional monomer may form a chain polymer bycombining with a multi-functional monomer, the mono-functional monomeror the di-functional monomer, or the multi-functional monomer may becross-linked with an adjacent polymer chain.

In an embodiment, the multi-functional monomer includes a (meth)acrylategroup. Example of the multi-functional monomer may includepentaerythritol triacrylate, pentaerythritol tetraacrylate,trimethylpropane triacrylate, trimethylpropane trimethacrylate, glyceroltriacrylate, tris(2-hydroxyethyl)isocyanurate triacrylate,di-trimethylpropane tetraacrylate, dipentaerythritol pentaacrylate,pentaerythrotol tetraacrylate and the like. These can each be used aloneor in a combination thereof.

When an amount of the multi-functional monomer is less than about 1% byweight, based on a total weight of the photoresist composition,cross-linking by photo-curing may not be sufficient, and the stabilityof the photoresist pattern may be reduced. When the amount of themulti-functional monomer is greater than about 10% by weight, based on atotal weight of the photoresist composition, a viscosity may beincreased, and a pattern having suitable resolution may not be easilyimprinted. Thus, the amount of the multi-functional monomer is betweenabout 1% by weight and about 10% by weight, based on the total weight ofthe photoresist composition. In one exemplary embodiment, the amount ofthe multi-functional monomer may be between about 1% by weight and about5% by weight.

The photoinitiator is activatable by a light, for example, anultraviolet light, so that the reaction of the monomers is activated bythe photoinitiator. Examples of the photoinitiator may include2-benzyl-2-(dimethylamino)-1-[4-(mopholinyl)phenyl]-1-butanone, phenylbis(2,4,6-trimethyl)benzoyl, 1-hydroxycycolhexyl phenyl ketone and thelike. These can be used alone or in combination thereof.

Furthermore, a photoinitiator, which generates a plurality of activesites may be used, and may be added to the examples of thephotoinitiator or substituted for the photoinitiator.

When an amount of the photoinitiator is less than 1% by weight, based ona total weight of the photoresist composition, the photo-curing reactionrate may be reduced or a cross-linking may not be sufficient. Thus, theamount of the photoinitiator is between about 1% by weight and about 5%by weight, based on the total weight of the photoresist composition.

The surfactant may be used to control the surface tension of thephotoresist composition and the surface energy of the photoresistcomposition. Examples of the surfactant may include a silicone-basedsurfactant or a fluoride-based surfactant, in detail, the surfactant mayinclude FZ-2110, FZ-2112 (available from Dow Corning Co., Ltd.),BYK®-345, BYK®-346, BYK®-348 (available from BYK Co., Ltd.) and thelike. These can each be used alone or in a combination thereof.

An exemplary embodiment of a photoresist composition may be used to forma photoresist pattern which has a high resistance with respect to adry-etching process using a plasma gas. Thus, the reliability of ananoimprinting process using the photoresist pattern for manufacturing apolarizer may be improved. Furthermore, a viscosity of the photoresistcomposition may be selected by selection of suitable a mono-functionalmonomer of the photoresist composition, so that a solvent may be omittedfrom the photoresist composition, unlike an extra solvent which is usedin a conventional photoresist composition. Where the solvent is omitted,a pre-baking process for drying the solvent may also be omitted, andthus efficiency in manufacturing the polarizer may be increased.

Hereinafter, an exemplary embodiment of a method of manufacturing apolarizer, according to, will be described with reference to theaccompanying drawings.

FIG. 1 to FIG. 6 are cross-sectional views illustrating an exemplaryembodiment of a method of manufacturing a polarizer.

Referring to FIG. 1, a reflective layer including a metal layer isformed (e.g., provided) on a base substrate. Particularly, a metal layer12 is disposed, e.g., formed, on a base substrate 10, and a protectivelayer 14 is disposed, e.g., formed, on the metal layer 12. Thereafter, aphotoresist composition is coated on the protective layer 14 to form aphotoresist coating layer 16.

A metal including nickel, aluminum, titanium, silver, chrome or the likeis deposited on the base substrate 10 by using a sputtering method orthe like for forming the metal layer 12. In one exemplary embodiment,for example, a thickness of the metal layer 12 may be about 50nanometers (nm) to about 200 nm.

The protective layer 14 is disposed on the metal layer 12, so that theprotective layer 14 prevents damaging of the metal layer 12 such as froma process that dry-etches a photoresist pattern formed from thephotoresist composition. The protective layer 14 may include siliconoxide, silicon nitride or the like, and a thickness of the protectivelayer 14 may be about 30 nm to about 100 nm.

The photoresist composition includes about 65% by weight to about 80% byweight of a mono-functional monomer, about 5% by weight to about 20% byweight of a di-functional monomer, about 1% by weight to 10% by weightof a multi-functional monomer including three or more functional groups,about 1% by weight to about 5% by weight of a photoinitiator, and lessthan about 1% by weight of a surfactant, based on the total weight ofthe photoresist composition.

The mono-functional monomer includes a reactive functional group, thedi-functional monomer includes two reactive functional groups, and themulti-functional monomer includes at least three reactive functionalgroups. The functional group may include a (meth)acrylate group.

The photoresist composition illustrated in the exemplary embodiment ofthe method of manufacturing a polarizer is substantially the same as thepreviously described exemplary embodiment of the photoresistcomposition, so that any repetitive explanation concerning the sameelements will be omitted.

A stamp 18 having a wire grid shape is disposed on the photoresistcoating layer 16, and a pressure is applied to the stamp 18. Thus, thewire grid pattern of the stamp 18 is transcribed into the photoresistcoating layer 16.

Particularly, the stamp 18 includes a plurality of protruding portions19 which are extended in a direction and vertically arrayed to thedirection. In one exemplary embodiment, the protruding portions 19 mayeach have a longitudinal axis which extends in a first direction, theprotruding portions 19 may be arranged in a second direction (e.g., leftto right in FIG. 1) such as perpendicular to the first direction, andthe protruding portions 19 protrude from a base portion in a thirddirection (e.g., up and down in FIG. 1) which may be orthogonal to thefirst and second directions. The protruding portions 19 are spaced apartfrom each other by a predetermined interval, such as in the seconddirection.

In one exemplary embodiment, for example, the stamp 18 may include aninorganic material, and the inorganic material may include silicon,silicon oxide, quartz glass or the like. Alternatively, the stamp 18 maybe formed by curing a thermo-cured resin, a thermo-plastic resin, aphoto-curing resin and the like. In an exemplary embodiment, forexample, a polyimide resin, epoxy resin, polyurethane resin,polypropylene resin, polyethylene resin, polyethyleneterephthalateresin, polymethylmethacrylate resin or the like may be used to form thestamp 18.

In an exemplary embodiment, the stamp 18 may be transparent, and mayhave high ultraviolet transmittance. For more easily separating thestamp 18 from the photoresist coating layer 16 after applying a pressureto the stamp 18, the stamp 18 may include a releasing layer (notillustrated) which contacts the photoresist coating layer 16. Therelease layer may include a compound having a fluoroalkyl group.

Referring to FIG. 2, while the pressure is applied to the stamp 18 totranscribe the wire grid pattern into the photoresist coating layer 16,a light, for example, an ultraviolet (“UV”) light is irradiated onto thephotoresist coating layer 16 to cure the photoresist coating layer 16.The photoresist coating layer 16 is patterned by the pressure from thestamp 18 to form a photoresist pattern 17 having a wire grid which has aconvex and concave cross-sectional shape.

A width of a protruding portion 19 of the wire grid and an intervallength between adjacent protruding portions 19 of the wire grid may beless than half the visible light wavelength, for example, may be about30 nm to about 150 nm. The width and the interval length may be taken inthe second direction (e.g., left to right in FIG. 2).

The light, applied from a light source which is disposed above and onthe stamp 18, passes through the stamp 18, and is irradiated onto thephotoresist coating layer 16. Thus, to promote transmission of the lightthrough the stamp 18, to the stamp 18 has a high light-transmittanceratio.

Referring to FIG. 3, the stamp 18 is removed from the photoresistpattern 17. The photoresist pattern 17 has a wire grid which has aconvex and concave cross-sectional shape. The photoresist pattern 17includes a first portion 17 a having a first thickness D1, and a secondportion 17 b having a second thickness D2 which is less than the firstthickness D1. The thicknesses may be taken in the third direction (e.g.,up and down in FIG. 3).

Referring FIG. 4, before etching the metal layer 12 and the protectivelayer 14, the second portion 17 b of the photoresist pattern 17 isremoved as indicated by the dotted lines. In one exemplary embodiment,for example, a plasma is applied to an entire of the photoresist pattern17 for dry-etching the photoresist pattern 17. In an alternativeexemplary embodiment, for example, an oxygen plasma or the like may beused in dry-etching the photoresist pattern 17.

In an exemplary embodiment, the photoresist pattern 17 formed from thephotoresist compositions may have a high resistance with respect to adry-etching process. Thus, in a process of removing the second portion17 b of the photoresist pattern 17, damage to the first portion 17 a maybe reduced or effectively prevented. Therefore, since the photoresistcomposition limits or prevents damage to the photoresist pattern 17 thereliability of a final metal pattern formed from the metal layer 12 suchas by etching may be improved.

The photoresist pattern 17 is entirely dry-etched, so that, in a processof removing the second portion 17 b, the thickness of the first portion17 a is reduced as indicated by the dotted lines in FIG. 4. By removingthe second portion 17 b, the protective layer 14 is partially exposed.

Referring to FIG. 5 and FIG. 6, by using a remaining photoresist pattern17 a as a mask, the metal layer 12 and the protective layer 14 aredry-etched or wet-etched, to form a metal pattern 13 and a protectivepattern 15, respectively, After the metal pattern 13 and the protectivepattern 15 are formed, the photoresist pattern 17 a is removed. Aplurality of metal patterns 15 and a plurality of protective patterns 15are formed on the base substrate 10, and may be otherwise referred to asa metal pattern layer and a protective pattern layer, respectively.

The metal pattern 13, as similar to the protruding portion 19 of thestamp 18, extends to a direction to have a substantially linear shape ina plan view of the base substrate, and adjacent metal patterns arespaced apart from each other. The metal pattern 13 functions as a wiregrid pattern, which transmits or reflects a light according to apolarized component of the light. In an exemplary embodiment, aplurality of metal patterns 13 may each have a longitudinal axis whichextends in a first direction, the metal patterns 13 may be arranged in asecond direction (e.g., left to right in FIG. 6) such as perpendicularto the first direction, and a thickness of the metal patterns 13 istaken in a third direction (e.g., up and down in FIG. 6) which may beorthogonal to the first and second directions. The same may be said fora plurality of protective patterns 15.

For protecting the metal pattern 13 and planarizing an surface of apolarizer including the metal pattern 13, a protecting film (notillustrated) may be formed on the base substrate 10.

According to an exemplary embodiment, in a manufacturing process of apolarizer by nanoimprinting, the reliability and the productivity of apolarizer may be increased by reducing or effectively preventing damageto a photoresist pattern mask.

Hereinafter, an exemplary embodiment of a method of manufacturing adisplay substrate will be explained with reference to the accompanyingdrawings.

FIG. 7 to FIG. 13 are cross-sectional views illustrating an exemplaryembodiment of a method of manufacturing a display substrate.

Referring to FIG. 7, a plurality of wire grid patterns 120 is formed ona base substrate 110. The wire grid patterns 120 are extended in adirection, and adjacent wire grid patterns are spaced apart from theeach other by a predetermined interval. The wire grid pattern 120functions as a polarizer which transmits or reflects a light irradiatedthereto, according to a polarized component of the light.

The wire grid pattern 120 includes a metal layer. The wire grid pattern120 may further include a protective layer on a metal layer to protectthe metal layer from damage during a forming process of the wire gridpattern 120.

A method of forming the wire grid pattern 120 is substantially the samewith the previously explained exemplary embodiment of the method ofmanufacturing a polarizer illustrated in FIG. 1 to FIG. 6. Thus, anyrepetitive explanation concerning the same elements will be omitted.

Referring to FIG. 8, a protecting film 130 is formed on the basesubstrate 110 including the wire grid pattern 120 thereon. Theprotecting film 130 may protect the wire grid pattern 120, and planarizean upper surface of the wire grid pattern 120 on the base substrate 110.

In an exemplary embodiment, for example, after coating a thermo-curingcomposition or a photo-curing composition, which include an epoxy resin,polyimide resin, phenol resin, polymethylmethacrylate resin or the like,the protecting film 130 may be formed by curing the thermo-curingcomposition or the photo-curing composition.

Referring to FIG. 9, a gate metal layer is formed on the protecting film130. The gate metal layer is patterned to form a gate pattern includinga gate line and a gate electrode 140. The gate line is extended in adirection, and the gate electrode 140 is connected to the gate line.

In exemplary embodiments, for example, a material that may be used forthe gate pattern may include at least one selected from molybdenum,aluminum, chrome, nickel, copper, titanium, manganese, and tungsten andthe like. The gate pattern may have a mono-layer structure, or amulti-layer structure having at least two metal layers which aredifferent from each other.

Thereafter, a first insulator film 150 covering the gate pattern isformed on the protecting film 130. In one exemplary embodiment, thefirst insulator film 150 may be formed by depositing silicon oxide,silicon nitride or the like by using a chemical-vapor deposition(“CVD”), but is not limited thereto or thereby.

Referring to FIG. 10, an active layer 160, an ohmic contact layer 170and a source metal layer 180 is sequentially formed on the firstinsulator film 150.

In one exemplary embodiment, for example, the active layer 160 mayinclude amorphous silicon, and the ohmic contact layer 170 may be formedby doping impurities to amorphous silicon. In exemplary embodiments,examples of a material that may be used for the source metal layer 180may include molybdenum, aluminum, chrome, nickel, copper, titanium,manganese, tungsten and the like. These can be used alone or in an alloythereof. Furthermore, the source metal layer 180 may have a mono-layerstructure, or a multi-layer structure having at least two metal layersdifferent from each other.

Referring to FIG. 11, the active layer 160, the ohmic contact layer 170and the source metal layer 180 are patterned to form an active patternAP, an ohmic contact pattern 172 and a source pattern. For patterningthe active layer 160, the ohmic contact layer 170 and the source metallayer 180 by using a mask, a photoresist pattern having differentthicknesses may be formed on the active layer 160 by using a half-tonemask or the like.

The active pattern AP overlaps the gate electrode 140. The ohmic contactpattern 172 is formed on the active pattern AP, and the ohmic contactpattern 172 includes portions which are spaced apart from each other.

The source pattern includes a data line (not illustrated) extended in adirection which crosses the gate line, a source electrode SE connectedto the data line, and a drain electrode DE spaced apart from the sourceelectrode SE. In one exemplary embodiment, for example, the data linemay have a longitudinal axis which is extended in a directionsubstantially vertical (e.g., perpendicular) to a longitudinal axis ofthe gate line, but is not limited thereto or thereby. The sourceelectrode SE and the drain electrode DE are spaced apart from each otherto expose a portion of the active pattern AP.

Referring to FIG. 12, a second insulator film 190, which covers theactive pattern AP, the ohmic contact pattern 172 and the source patternis formed. A contact hole CH is further formed in the second insulatorfilm 190 and partially exposes the drain electrode DE of the sourcepattern.

The second insulator film 190 may include an organic material or aninorganic material. In one exemplary embodiment, for example, the secondinsulator film 190 may include an organic insulator film formed from aphotoresist composition. The photoresist composition is coated and curedto form the organic insulator film. In a curing process of thephotoresist composition, after exposing the photoresist composition to alight, a light-exposed portion or a non-light-exposed portion is removedto form the contact hole CH.

In another exemplary embodiment, the second insulator film 190 mayinclude an inorganic insulator film including a silicon oxide layer or asilicon nitride layer, which are formed by CVD and the like. Afterforming a photoresist pattern on the inorganic insulator film, theinorganic insulator film is partially etched to form the contact holeCH.

In another exemplary embodiment, the second insulator film 190 mayinclude an organic insulator film and an inorganic insulator film. Inone exemplary embodiment, for example, the inorganic insulator filmwhich covers the active pattern AP, the ohmic contact pattern 172 andthe source pattern is formed, and an organic insulator film may beformed on the inorganic insulator film.

Referring to FIG. 13, a transparent electrode layer is formed on thesecond insulator layer 190. The transparent electrode layer may includea transparent conductive material including at least one selected froman indium-tin-oxide, an indium-zinc-oxide and the like.

Thereafter, transparent conductive material is patterned to form a pixelelectrode PE. The pixel electrode PE contacts the drain electrode DEthrough the contact hole CH of the second insulator layer 190.

According to an exemplary embodiment, in a process of manufacturing awire grid pattern using a nanoimprinting, the reliability and theproductivity of a wire grid pattern is improved by reducing oreffectively preventing damage of a photoresist pattern mask.

FIG. 14 is a cross-sectional view illustrating an exemplary embodimentof a display panel having a manufactured polarizer according to.

Referring to FIG. 14, the display panel 1000 includes an array substrate100 and an opposing substrate 200.

The array substrate 100 includes a first base substrate 110, a firstwire grid pattern 120 on the first base substrate 110, a firstprotecting film 130 covering the first wire grid pattern 120, a gateelectrode 140 on the first protecting film 130, a first insulator film150 covering the gate electrode 140, an active pattern AP on the firstinsulator film 150 and overlapping the gate electrode 140, an ohmicpattern 172 on the active pattern AP, a source electrode SE and a drainelectrode DE which are on the ohmic contact pattern 172 and spaced apartfrom each other, a second insulator film 190 covering the sourceelectrode SE and the drain electrode DE, and a pixel electrode PE on thesecond insulator film 190 and contacting the drain electrode DE. Aswitching element includes the gate electrode 140, the active patternAP, the source electrode SE and the drain electrode DE. In an exemplaryembodiment, a plurality of switching elements may be arranged with aconfiguration having a matrix shape to form a switching element array.The array substrate 100 is substantially the same to the exemplaryembodiment of the display substrate illustrated in FIG. 13.

The first wire grid pattern 120 functions as a polarizer which transmitsor reflects a light irradiated onto the first wire pattern 120,according to the polarized component of the light. In one exemplaryembodiment, for example, a S-phase light which is substantially parallelwith the first wire grid pattern 120 may be reflected by the first wiregrid pattern 120, and a P-phase light which is substantially vertical(e.g., perpendicular to) the first wire grid pattern 120 may passthrough the first wire grid pattern 120.

When a backlight assembly (not shown) is disposed under the arraysubstrate 100, light initially reflected by the first wire grid pattern120 may be reflected by a reflecting plate of the backlight assemblysuch that the light is irradiated onto the first wire grid pattern 120again. According to the above recycling process of a light, thebrightness of a display device employing the display panel 1000 and thebacklight assembly is improved.

The opposing substrate 200 includes a second base substrate 210, asecond wire grid pattern 220 on the second base substrate 210, a secondprotecting film 230 covering the second wire grid pattern 220, a blackmatrix 240 on the second protecting film 230, a color filter layer 250on the second protecting film 230, a planarization film 260 covering theblack matrix 240 and the color filter layer 250, and a common electrode270 facing the array substrate 100 and on the planarization film 260.

The second wire grid pattern 220 is extended in a direction and adjacentsecond wire grid patterns 220 are spaced apart from each other at apredetermined interval. In one exemplary embodiment, for example, thesecond wire grid pattern 220 may have a longitudinal axis which isextended in a direction substantially vertical (e.g., perpendicular) toa longitudinal axis of the first wire grid pattern 120. The second wiregrid pattern 220 functions as a polarizer, similar to the first wiregrid pattern 120, such that is transmits or reflects a light irradiatedin to the second wire pattern 220, according to the polarized componentof the light. A method of forming the second wire grid pattern 220 andthe second protecting film 230 may be substantially the same as a methodof forming the first wire grid pattern 120 and the first protecting film130.

In an alternative exemplary embodiment, the black matrix 240 and/or theplanarization film 260 may be omitted. Furthermore, the color filterlayer 250 and/or the common electrode 270 may be in the array substrate100 instead of the opposing substrate 200.

FIG. 15 is a cross-sectional view illustrating another exemplaryembodiment of a display panel having a manufactured polarizer.

Referring to FIG. 15, a display panel 2000 includes an array substrate300 and an opposing substrate 400.

The array substrate 300 includes a first base substrate 310, a firstwire grid pattern 320 on a first plane of the base substrate 310 (e.g.,a lower surface), a first protecting film 330 covering the first wiregrid pattern 320, a gate electrode 340 on a second plane (e.g., an uppersurface) which is opposite to the first plane of the first basesubstrate 310, a first insulator film 350 covering the gate electrode340, an active pattern AP on the first insulator film 350 andoverlapping the gate electrode 340, an ohmic pattern 372 on the activepattern AP, a source electrode SE and a drain electrode DE which are onthe ohmic contact pattern 372 and spaced apart from each other, a secondinsulator film 390 covering the source electrode SE and the drainelectrode DE, and a pixel electrode PE on the second insulator film 390and contacting the drain electrode DE.

The array substrate 300 is substantially the same as the array substrate100 illustrated in FIG. 14 except that the first wire grid pattern 320and the first protecting film 330 are on the lower surface of the firstbase substrate 310 such that the first base substrate 310 is disposedbetween the first wire grid pattern 320 and a switching element.

The opposing substrate 400 includes a second base substrate 410, asecond wire grid pattern 420 on a first plane of the second basesubstrate 410 (e.g., an upper surface), a second protecting film 430covering the second wire grid pattern 420, a black matrix 440 on asecond plane (e.g., a lower surface) which is opposing to the firstplane and on the second base substrate 410, a color filter layer 450 onthe second plane, a planarization film 460 covering the black matrix 440and the color filter layer 450, and a common electrode 470 facing thearray substrate 300 and on the planarization film 460.

The opposing substrate 400 is substantially the same as the opposingsubstrate 200 illustrated in FIG. 14 except that the second wire gridpattern 420 and the second protecting film 430 are on the upper surfaceof the second base substrate 410 such that the second base substrate 410is disposed between the second wire grid pattern 420, and the blackmatrix 440 and the color filter layer 450.

In the exemplary embodiments illustrated in FIG. 14 and FIG. 15, wiregrid patterns are included within a display panel. However, in anotherexemplary embodiment, the wire grid patterns may be on a polarizingplate separated from a display panel, or on an optical sheet such as adiffusion plate or the like.

The foregoing is illustrative and is not to be construed as limitingthereof. Although a few exemplary embodiments have been described, thoseskilled in the art will readily appreciate that many modifications arepossible in the exemplary embodiments without materially departing fromthe novel teachings and advantages. Accordingly, all such modificationsare intended to be included within the scope as defined in the claims.

What is claimed is:
 1. A photoresist composition comprising: about 65percent by weight to about 80 percent by weight of a mono-functionalmonomer; about 5 percent by weight to about 20 percent by weight of adi-functional monomer; about 1 percent by weight to about 10 percent byweight of a multi-functional monomer comprising three or more functionalgroups; about 1 percent by weight to about 5 percent by weight of aphotoinitiator; and less than about 1 percent by weight of a surfactant,each based on a total weight of the photoresist composition.
 2. Thephotoresist composition of claim 1, wherein the mono-functional monomercomprises at least one selected from glycidyl acrylate, glycidylmethacrylate, hydroxyethyl methacrylate, 2-hydroxy-3-phenoxy-propylacrylate, diethylene methylether methacrylate, hydroxyethyl acrylate,butyl methacrylate, hydroxypropyl acrylate, 2-phenoxyethyl acrylate,2-phenoxyethyl methacrylate, 3,3,5-trimethylcyclohexyl methacrylate,isobornyl acrylate, isobornyl methacrylate, isodecyl acrylate, isodecylmethacrylate, isooctyl acrylate, lauryl acrylate, stearyl acrylate,tetrahydrofurfuryl acrylate and tridecyl acrylate.
 3. The photoresistcomposition of claim 1, wherein the di-functional monomer includes atleast one selected from 1,6-hexanediol diacrylate, 1,6-hexanedioldimethacrylate, ethyleneglycol dimethacrylate, diethylenedimethacrylate, 1,1,2-dodecanediol dimethacrylate, 1,4-butanedioldimethacrylate, neopentylglycol diacrylate, diethylene diacrylate,dipropyleneglycol diacrylate, bisphenol A diacrylate, bisphenol Adimethacrylate, ethyleneglycol diacrylate, tetraethyleneglycoldiacrylate, tricyclodecanedimethanol diacrylate and triethyleneglycoldiacrylate.
 4. The photoresist composition of claim 1, wherein themulti-functional monomer includes at least one selected frompentaerythritol triacrylate, pentaerythritol tetraacrylate,trimethylpropane triacrylate, trimethylpropane trimethaacrylate,grycerol triacrylate, tri(2-hydroxyethyl)isocyanurate triacrylate,di-trimethylpropane tetraacrylate, dipentaerythritol pentaacrylate andpentaerythritol tetraacrylate.
 5. The photoresist composition of claim1, wherein the photoinitiator includes at least one selected from2-benzyl-2-(dimethylamino)-1-[4-(morpholinyl)phenyl]-1-butanone, phenylbis(2,4,6-trimethyl)benzoyl and 1-hydroxycyclohexyl phenylketone.
 6. Thephotoresist composition of claim 1, wherein the surfactant comprises atleast one selected from a silicone surfactant and a fluoride surfactant.7. A method of forming a polarizer, the method comprising: providing areflective layer on a base substrate; coating a photoresist compositionon the reflective layer to form a photoresist coating layer, thephotoresist composition comprising: about 65 percent by weight to about80 percent by weight of a mono-functional monomer, about 5 percent byweight to about 20 percent by weight of a di-functional monomer, about 1percent by weight to about 10 percent by weight of a multi-functionalmonomer comprising three or more functional groups, about 1 percent byweight to about 5 percent by weight of a photoinitiator, and less thanabout 1 percent by weight of a surfactant, each based on a total weightof the photoresist composition; contacting the photoresist coating layerwith a stamp having a wire grid shape to pattern the photoresist coatinglayer; curing the patterned photoresist coating layer to form aphotoresist pattern having the wire grid shape; removing the stamp fromthe photoresist pattern having the wire grid shape; and etching thereflective layer using the photoresist pattern as a mask to form a wiregrid pattern to form the polarizer.
 8. The method of claim 7, whereinthe reflective layer comprises a metal layer, and a protective layer onthe metal layer.
 9. The method of claim 8, wherein the metal layercomprises at least one selected from nickel, aluminum, titanium, silverand chrome.
 10. The method of claim 8, wherein the protective layercomprises at least one selected from a silicon nitride and a siliconoxide.
 11. The method of claim 7, wherein the mono-functional monomerincludes at least one selected glycidyl acrylate, glycidyl methacrylate,hydroxyethyl methacrylate, 2-hydroxy-3-phenoxy-propyl acrylate,diethylene methylether methacrylate, hydroxyethyl acrylate, butylmethacrylate, hydroxypropyl acrylate, 2-phenoxyethyl acrylate,2-phenoxyethyl methacrylate, 3,3,5-trimethylcyclohexyl methacrylate,isobornyl acrylate, isobornyl methacrylate, isodecyl acrylate, isodecylmethacrylate, isooctyl acrylate, lauryl acrylate, stearyl acrylate,tetrahydrofurfuryl acrylate and tridecyl acrylate, wherein thedi-functional monomer includes at least one selected from 1,6-hexanedioldiacrylate, 1,6-hexanediol dimethacrylate, ethyleneglycoldimethacrylate, diethylene dimethacrylate, 1,1,2-dodecanedioldimethacrylate, 1,4-butanediol dimethacrylate, neopentylglycoldiacrylate, diethylene diacrylate, dipropyleneglycol diacrylate,bisphenol A diacrylate, bisphenol A dimethacrylate, ethyleneglycoldiacrylate, tetraethyleneglycol diacrylate, tricyclodecanedimethanoldiacrylate and triethyleneglycol diacrylate, and wherein themulti-functional monomer includes at least one selected frompentaerythritol triacrylate, pentaerythritol tetraacrylate,trimethylpropane triacrylate, trimethylpropane trimethacrylate, gryceroltriacrylate, tri(2-hydroxyethyl)isocyanurate triacrylate,di-trimethylpropane tetraacrylate, dipentaerythritol pentaacrylate andpentaerythritol tetraacrylate.
 12. The method of claim 7, wherein thecuring the patterned photoresist coating layer comprises irradiating anultraviolet light onto the patterned photoresist coating layer.
 13. Themethod of claim 7, wherein the photoresist pattern comprises: a firstportion having a first thickness, and a second portion having a secondthickness less than the first thickness, and the method furthercomprises removing the second portion of the photoresist pattern toexpose a portion of the reflective layer, before the etching thereflective layer.
 14. The method of claim 13, wherein the removing thesecond portion of the photoresist pattern comprises applying a plasma toan entire of the photoresist pattern.
 15. A method of manufacturing adisplay substrate, the method comprising: providing a reflective layeron a base substrate; coating a photoresist composition on the reflectivelayer to form a photoresist coating layer, the photoresist compositioncomprising about 65 percent by weight to about 80 percent by weight of amono-functional monomer, about 5 percent by weight to about 20 percentby weight of a di-functional monomer, about 1 percent by weight to about10 percent by weight of a multi-functional monomer comprising three ormore functional groups, about 1 percent by weight to about 5 percent byweight of a photoinitiator, and less than about 1 percent by weight of asurfactant, each based on a total weight of the photoresist composition;contacting the photoresist coating layer with a stamp having a wire gridshape to pattern the photoresist coating layer; curing the patternedphotoresist coating layer to form a photoresist pattern having the wiregrid shape; removing the stamp from the photoresist pattern having thewire grid shape; etching the reflective layer using the photoresistpattern as a mask to form a wire grid pattern; providing a planarizingprotecting film on the wire grid pattern; and providing a switchingelement array on the planarizing protecting film to manufacture thedisplay substrate.
 16. The method of claim 15, wherein the reflectivelayer comprises a metal layer and a protective layer on the metal layer.17. The method of claim 16, wherein the metal layer comprises at leastone selected from nickel, aluminum, titanium, silver and chrome.
 18. Themethod of claim 16, wherein the protective layer includes at least oneselected from a silicon nitride and a silicon oxide.
 19. The method ofclaim 15, wherein the mono-functional monomer includes at least oneselected glycidyl acrylate, glycidyl methacrylate, hydroxyethylmethacrylate, 2-hydroxy-3-phenoxy-propyl acrylate, diethylenemethylether methacrylate, hydroxyethyl acrylate, butyl methacrylate,hydroxypropyl acrylate, 2-phenoxyethyl acrylate, 2-phenoxyethylmethacrylate, 3,3,5-trimethylcyclohexyl methacrylate, isobornylacrylate, isobornyl methacrylate, isodecyl acrylate, isodecylmethacrylate, isooctyl acrylate, lauryl acrylate, stearyl acrylate,tetrahydrofurfuryl acrylate and tridecyl acrylate, wherein thedi-functional monomer includes at least one selected from 1,6-hexanedioldiacrylate, 1,6-hexanediol dimethacrylate, ethyleneglycoldimethacrylate, diethylene dimethacrylate, 1,1,2-dodecanedioldimethacrylate, 1,4-butanediol dimethacrylate, neopentylglycoldiacrylate, diethylene diacrylate, dipropyleneglycol diacrylate,bisphenol A diacrylate, bisphenol A dimethacrylate, ethyleneglycoldiacrylate, tetraethyleneglycol diacrylate, tricyclodecanedimethanoldiacrylate and triethyleneglycol diacrylate, and wherein themulti-functional monomer includes at least one selected frompentaerythritol triacrylate, pentaerythritol tetraacrylate,trimethylpropane triacrylate, trimethylpropane trimethacrylate, gryceroltriacrylate, tri(2-hydroxyethyl)isocyanurate triacrylate,di-trimethylpropane tetraacrylate, dipentaerythritol pentaacrylate andpentaerythritol tetraacrylate.
 20. A method of manufacturing a displaysubstrate, the method comprising: providing a reflective layer on afirst surface of a base substrate; coating a photoresist composition onthe reflective layer to form a photoresist coating layer, thephotoresist composition comprising about 65 percent by weight to about80 percent by weight of a mono-functional monomer; about 5 percent byweight to about 20 percent by weight of a di-functional monomer; about 1percent by weight to about 10 percent by weight of a multi-functionalmonomer comprising three or more functional groups; about 1 percent byweight to about 5 percent by weight of a photoinitiator; and less thanabout 1 percent by weight of a surfactant, each based on a total weightof the photoresist composition; contacting the photoresist coating layerwith a stamp having a wire grid shape to pattern the photoresist coatinglayer; curing the patterned photoresist coating layer to form aphotoresist pattern having the wire grid shape; removing the stamp fromthe photoresist pattern having the wire grid shape; etching thereflective layer using the photoresist pattern as a mask to form a wiregrid pattern; providing a planarizing protecting film on the wire gridpattern; and providing a switching element array on a second surfaceopposite to the first surface of the base substrate to manufacture thedisplay substrate.